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Samsung starts mass production of the industry's first DDR4 memory modules on the basis of 3D TSV technology
Good evening, Habr!
Yesterday, Samsung Electronics announced the start of mass production of the industry's first DDR4 standard RDIMM memory capacity of 64 GB. These new modules are composed of 36 chips DDR4 DRAM, each of which in turn consists of four crystals DDR4 DRAM capacity of 4 GB. The chips are energy efficient and are manufactured using advanced process technology class 20 nm. Chips are collected in a single stack using the newest method on the through-connection of crystals called TSV (Through Silicon Via). New high-density modules will play a key role in the further development of the corporate servers and cloud-based applications, as well as the diversification of solutions for data centers.
Starting mass production modules 3D TSV marks a new milestone in the history of memory technologies; Recall that the last important development in this area Samsung became the flash 3D Vertical NAND (V-NAND), first introduced last year. While the technology of 3D V-NAND based on high vertical structure of arrays of cells inside the monolithic crystal, 3D TSV - an innovative technology package building, allowing vertical interconnect layers of crystals.
To create a package of 3D TSV DRAM DDR4 crystals worn down to a thickness of several tens of microns, after which the crystals doing hundreds of tiny holes. They are vertically interconnected by means of electrodes which run through these holes. As a result, the new module 3D TSV has twice the capacity and twice the minimal energy consumption compared with the module built on top of wire strapping crystals.
In the near future, Samsung plans to link the more than four crystals DDR4, using the technology of 3D TSV, DRAM modules to create a higher density. This will accelerate the expansion of solutions for the memory market premium and, accordingly, the transition to DDR3 memory DDR4 memory in the server market.
Samsung is working hard to improve the technology of 3D TSV since 2010, when they were first developed modules 8GB DRAM RDIMM class 40 nm. This year, Samsung became the new system of production packages TSV, designed for mass production of the new server modules.
Source: habrahabr.ru/company/samsung/blog/234859/
Yesterday, Samsung Electronics announced the start of mass production of the industry's first DDR4 standard RDIMM memory capacity of 64 GB. These new modules are composed of 36 chips DDR4 DRAM, each of which in turn consists of four crystals DDR4 DRAM capacity of 4 GB. The chips are energy efficient and are manufactured using advanced process technology class 20 nm. Chips are collected in a single stack using the newest method on the through-connection of crystals called TSV (Through Silicon Via). New high-density modules will play a key role in the further development of the corporate servers and cloud-based applications, as well as the diversification of solutions for data centers.
Starting mass production modules 3D TSV marks a new milestone in the history of memory technologies; Recall that the last important development in this area Samsung became the flash 3D Vertical NAND (V-NAND), first introduced last year. While the technology of 3D V-NAND based on high vertical structure of arrays of cells inside the monolithic crystal, 3D TSV - an innovative technology package building, allowing vertical interconnect layers of crystals.
To create a package of 3D TSV DRAM DDR4 crystals worn down to a thickness of several tens of microns, after which the crystals doing hundreds of tiny holes. They are vertically interconnected by means of electrodes which run through these holes. As a result, the new module 3D TSV has twice the capacity and twice the minimal energy consumption compared with the module built on top of wire strapping crystals.
In the near future, Samsung plans to link the more than four crystals DDR4, using the technology of 3D TSV, DRAM modules to create a higher density. This will accelerate the expansion of solutions for the memory market premium and, accordingly, the transition to DDR3 memory DDR4 memory in the server market.
Samsung is working hard to improve the technology of 3D TSV since 2010, when they were first developed modules 8GB DRAM RDIMM class 40 nm. This year, Samsung became the new system of production packages TSV, designed for mass production of the new server modules.
Source: habrahabr.ru/company/samsung/blog/234859/
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