Samsung has started mass production of 3, 2 TB 3D V-NAND SSD-memory server interface NVMe

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Samsung Electronics has announced the start of mass production of SSDs 3D V-NAND interface and NVMe memory 3, 2 TB, intended for use in high-end enterprise server systems, hi-end segment.

New NVME PCIe SSD model SM1715 stack memory used proprietary Samsung Card form factor HHHL (half-height, half-length; half height, half length). It is possible to create a solid state drive of 3, 2 TB, more than double the previous record of NVME SSD capacity of 1, 6 TB. SSD SM1715 is an improved version of the model XS1715 in terms of performance and reliability. This 2, 5-inch SSD was awarded the 2014 Flash Memory Summit Best of Show Award as one of the most innovative developments in the field of flash memory.
New NVMe SSD volume 3, 2 TB provides sequential read speed of up to 3000 MB / s and write speed of up to 2200 MB / s. Indicators IOPS (number of operations with random data blocks of 4 KB) is 750 thousand. And 130 thousand. To read and write, respectively. In addition, SSD SM1715 of 3, 2 GB is for 10 complete cycles of rewriting daily (DWPD) for five years. This ensures high reliability, which is critical to enterprise servers.
Drive Samsung SM1715 will be produced in two versions: a volume of 1, 6 and 3 TB, 2 TB. 2, 5-inch model with XS1715 NVMe-interface will also be available two options: with a capacity of 800 GB and 1 TB 6. Prices have not been announced.



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