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Intel promises SSD-drives 10 TB volume in two years
256-384 gigabits per 3D-chip 32 layers
In a conventional NAND-memory electrical components integrated within planar structures, and the layers are not connected. In August last year, Samsung began producing 3D-chips, consisting of vertically stacked layers of cells 24. For a long time the only Korean company produced V-NAND, but on November 20 this year in video presentations to investors Intel unveiled plans response solutions.
Intel is going to find room 256 gigabits (32 GB) on a single chip NAND-memory of the 32 layers of technology MLC (multi-level cell), the use of which is stored in each cell of the two bits that require calibration four states. When using TLC (triple-level cell, eight states), this volume will increase by half to 384 gigabits (48 gigabytes).
In Samsung are working on "flat" schemes in 14 nm. Intel and Micron are working with 2D memory process technology to 16 nm. But the reliability of 3D memory decreases with decreasing size of elements. Samsung 3D-chips using 40 nm process technology, it is expected that Intel will do the same.
Increasing the size of the elements using 3D-technology has led to the fact that the Samsung 850 Pro называют the fastest and most reliable drives on the market.
In Intel does not want to install rigid frame since the advent of 10-terabyte tverdotelnikov. Most likely, the first volume of this unit will focus on the corporate sector and only later will be widely distributed in home computers.
Vice president and general manager, Intel Rob Crook has promised that the first volume of the drives will create just two years later. As he noted, may cause terabyte memory 2 mm thick, which means that the memory of mobile devices will increase, too.
The new chips will be produced in cooperation with Micron Technology factory Intel Micron Flash Technologies in Lehi, Utah. The works will be the second half of 2015.
For comparison, Samsung has V-NAND drive SM1715 NVMe volume 3, 2 TB. 400-gigabyte 845DC Pro uses 4 24-layer 3D-chip 40nm process technology, the volume of each of 128 GB. The model used the 850 Pro 32-ply V-NAND MLC-86 gigabit chip volume.
At the end of this year, Hynix планирует to begin production of 3D-NAND. Similar works ведутся and SanDisk, maybe in 2015 we will see on the shelves of their first results. It is likely that in the next year 3D-memory will become the norm.
Based on materials Extreme Tech , KitGuru and TheRegister. What is "fair" amount of solid-state drives in your system?
In a conventional NAND-memory electrical components integrated within planar structures, and the layers are not connected. In August last year, Samsung began producing 3D-chips, consisting of vertically stacked layers of cells 24. For a long time the only Korean company produced V-NAND, but on November 20 this year in video presentations to investors Intel unveiled plans response solutions.
Intel is going to find room 256 gigabits (32 GB) on a single chip NAND-memory of the 32 layers of technology MLC (multi-level cell), the use of which is stored in each cell of the two bits that require calibration four states. When using TLC (triple-level cell, eight states), this volume will increase by half to 384 gigabits (48 gigabytes).
In Samsung are working on "flat" schemes in 14 nm. Intel and Micron are working with 2D memory process technology to 16 nm. But the reliability of 3D memory decreases with decreasing size of elements. Samsung 3D-chips using 40 nm process technology, it is expected that Intel will do the same.
Increasing the size of the elements using 3D-technology has led to the fact that the Samsung 850 Pro называют the fastest and most reliable drives on the market.
In Intel does not want to install rigid frame since the advent of 10-terabyte tverdotelnikov. Most likely, the first volume of this unit will focus on the corporate sector and only later will be widely distributed in home computers.
Vice president and general manager, Intel Rob Crook has promised that the first volume of the drives will create just two years later. As he noted, may cause terabyte memory 2 mm thick, which means that the memory of mobile devices will increase, too.
The new chips will be produced in cooperation with Micron Technology factory Intel Micron Flash Technologies in Lehi, Utah. The works will be the second half of 2015.
For comparison, Samsung has V-NAND drive SM1715 NVMe volume 3, 2 TB. 400-gigabyte 845DC Pro uses 4 24-layer 3D-chip 40nm process technology, the volume of each of 128 GB. The model used the 850 Pro 32-ply V-NAND MLC-86 gigabit chip volume.
At the end of this year, Hynix планирует to begin production of 3D-NAND. Similar works ведутся and SanDisk, maybe in 2015 we will see on the shelves of their first results. It is likely that in the next year 3D-memory will become the norm.
Based on materials Extreme Tech , KitGuru and TheRegister. What is "fair" amount of solid-state drives in your system?
| I have no SSD |
| Less than 120 GB |
| 120-250 GB |
| 250-500 GB |
| 500-1000 GB |
| more than 1000 GB Only registered users can vote in polls. Sign , please. 348 people voted. 21 people abstained. Source: geektimes.ru/post/241994/ |
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