Scientists have created a hybrid nanowires

Indium arsenide (green cyan) is integrated in the silicon nanopoulos (blue).
Photo: HZDR / Prucnal

A team of scientists from the Vienna University of technology, Centre of Gelmgoltsa in Dresden and the University of Maria Curie-Sklodowska were able to accommodate semiconductor crystals into a silicon nanowire.

New technology for producing hybrid nanowires allows you to create fast and multi-functional devices that can be accommodated in a single chip. Until now, research in nano-optoelectronics have been faced with problems: the electronic components must be accommodated in very small spaces. On the other hand, compound semiconductors must be placed in the usual materials. An international group of scientists has made a huge leap in overcoming those problems. They were able to integrate complex semiconductor crystals of indium arsenide (InAs) into silicon nanowires, ideal for building a compact chips.

For the implementation of a technological breakthrough, the researchers used a synthesized beam of ions and heat treatment with xenon lamps-flashes. Initially, the scientists injected the right amount of atoms using ion implantation, and then spent the annealing of the silicon wires within 20 milliseconds.

Source: nauka24news.ru/